SPW15N60CFD Infineon Technologies, SPW15N60CFD Datasheet
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SPW15N60CFD
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SPW15N60CFD Summary of contents
Page 1
... D dv /dt V =480 V, T =125 ° /dt I =13 =480 =125 ° static >1 Hz =25 °C tot stg M3 & 3.5 screws page 1 SPW15N60CFD @ Tjmax 650 0.330 Ω 13.4 PG-TO247 Value 13.4 8.4 33 460 0.8 13 600 ±20 ±30 156 -55 ... 150 Unit V/ns V/ns A/µ ° ...
Page 2
... D V =600 DSS T =25 ° =600 =150 ° = GSS = =9 DS(on) T =25 ° = =9 =150 ° MHz, open drain G |V |>2 DS(on)max =9 page 2 SPW15N60CFD Values Unit min. typ. max 0.8 K 260 °C 600 - - V - 700 - 1.4 - µA - 1200 - - - 100 nA Ω - 0.28 0. 2008-02-11 ...
Page 3
... MHz C rss C o(er 480 V C o(tr) t d(on) V =400 = =13 =3.6 Ω d(off =480 =13 plateau AV while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss DS page 3 SPW15N60CFD Values Unit min. typ. max. - 1820 - pF - 520 - - 110 - - 7 *f. AR DSS. DSS. 2008-02-11 ...
Page 4
... Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Rev. 1.2 Symbol Conditions =25 ° S,pulse =25 ° =480 /dt =100 A/µ rrm =25 ° page 4 SPW15N60CFD Values Unit min. typ. max 13 1.0 1 147 - µ 1200 - A/µs 2008-02-11 ...
Page 5
... Max. transient thermal impedance I =f =25 ° parameter: D 0.5 0.2 0 0.05 0.02 0.01 single pulse - Rev. 1.2 2 Safe operating area I =f parameter 120 160 10 [° Typ. output characteristics I =f parameter [s] p page 5 SPW15N60CFD ); T =25 ° limited by on-state resistance 10 µs 100 µ [ =25 ° µ 2008-02-11 ...
Page 6
... T Rev. 1.2 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 1 1.6 1 1.2 1 6 0.6 0 Typ. transfer characteristics I =f parameter typ 100 140 180 0 [°C] j page 6 SPW15N60CFD ); T =150 ° 6 5 [A] D |>2 DS(on)max j 25 °C 150 ° [ 2008-02-11 ...
Page 7
... Rev. 1.2 10 Forward characteristics of reverse diode I =f parameter 120 V 480 [nC] 12 Avalanche energy E =f 480 420 360 300 240 25 °C 125 °C 180 120 [µs] page 7 SPW15N60CFD j 150 °C, 98% 25 °C 150 °C 25 °C, 98% 0 0.5 1 1 125 T [° 175 2008-02-11 ...
Page 8
... Rev. 1.2 14 Typ. capacitances C =f 100 140 180 [° Typ. reverse recovery charge Q =f(T );parameter 1.8 1.6 1.4 1.2 1 300 400 500 600 25 [V] DS page 8 SPW15N60CFD = MHz GS Ciss Coss Crss 100 200 300 400 V [V] DS =13 100 T [°C] j 500 125 2008-02-11 ...
Page 9
... Typ. reverse recovery charge Q =f(I ); parameter: di/ dt =100 A/µ 1.8 1.6 1.4 1 °C 0.8 0.6 0.4 0 Rev. 1.2 18 Typ. reverse recovery charge Q =f(di /dt ); parameter 125 °C 2.5 2 1 100 [A] S page 9 SPW15N60CFD =13 125 °C 25 °C 200 300 400 500 d i/d t [A/µs] 2008-02-11 ...
Page 10
... Definition of diode switching characteristics Rev. 1.2 page 10 SPW15N60CFD 2008-02-11 ...
Page 11
... PG-TO-247-3-1 Rev. 1.2 page 11 SPW15N60CFD 2008-02-11 ...
Page 12
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 (www.infine on.com). . page 12 SPW15N60CFD 2008-02-11 ...