SPW15N60CFD Infineon Technologies, SPW15N60CFD Datasheet

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SPW15N60CFD

Manufacturer Part Number
SPW15N60CFD
Description
MOSFET N-CH 650V 13.4A TO-247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of SPW15N60CFD

Package / Case
TO-247-3 (Straight Leads)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
330 mOhm @ 9.4A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
13.4A
Vgs(th) (max) @ Id
5V @ 750µA
Gate Charge (qg) @ Vgs
84nC @ 10V
Input Capacitance (ciss) @ Vds
1820pF @ 25V
Power - Max
156W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.33 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13.4 A
Power Dissipation
156000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
13.4A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
330mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000264429

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPW15N60CFD
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.2
Features
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Qualified according to JEDEC
CoolMOS CFD designed for:
• Softswitching PWM Stages
• LCD & CRT TV
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
Drain source voltage slope
Reverse diode dv /dt
Maximum diode commutation speed
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
CoolMOS
Type
SPW15N60CFD
TM
Power Transistor
2)
j
Package
PG-TO247
=25 °C, unless otherwise specified
2),3)
2),3)
1)
for target applications
dv /dt
di /dt
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
j
AS
AR
GS
tot
, T
Marking
15N60CFD
stg
T
T
T
I
I
I
V
I
T
static
AC (f >1 Hz)
T
M3 & 3.5 screws
D
D
D
S
page 1
C
C
C
j
C
DS
=6.7 A, V
=13.4 A, V
=13.4 A,
=13.4 A, V
=125 °C
=25 °C
=100 °C
=25 °C
=25 °C
=480 V, T
DD
Product Summary
V
R
I
DS
DD
D
=50 V
j
DS
=125 °C
DS(on),max
=480 V,
=50 V
@ Tjmax
-55 ... 150
Value
PG-TO247
13.4
13.4
460
600
±20
±30
156
8.4
0.8
33
80
40
60
SPW15N60CFD
0.330 Ω
13.4
650
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
Ncm
V
A
2008-02-11

Related parts for SPW15N60CFD

SPW15N60CFD Summary of contents

Page 1

... D dv /dt V =480 V, T =125 ° /dt I =13 =480 =125 ° static >1 Hz =25 °C tot stg M3 & 3.5 screws page 1 SPW15N60CFD @ Tjmax 650 0.330 Ω 13.4 PG-TO247 Value 13.4 8.4 33 460 0.8 13 600 ±20 ±30 156 -55 ... 150 Unit V/ns V/ns A/µ ° ...

Page 2

... D V =600 DSS T =25 ° =600 =150 ° = GSS = =9 DS(on) T =25 ° = =9 =150 ° MHz, open drain G |V |>2 DS(on)max =9 page 2 SPW15N60CFD Values Unit min. typ. max 0.8 K 260 °C 600 - - V - 700 - 1.4 - µA - 1200 - - - 100 nA Ω - 0.28 0. 2008-02-11 ...

Page 3

... MHz C rss C o(er 480 V C o(tr) t d(on) V =400 = =13 =3.6 Ω d(off =480 =13 plateau AV while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss DS page 3 SPW15N60CFD Values Unit min. typ. max. - 1820 - pF - 520 - - 110 - - 7 *f. AR DSS. DSS. 2008-02-11 ...

Page 4

... Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Rev. 1.2 Symbol Conditions =25 ° S,pulse =25 ° =480 /dt =100 A/µ rrm =25 ° page 4 SPW15N60CFD Values Unit min. typ. max 13 1.0 1 147 - µ 1200 - A/µs 2008-02-11 ...

Page 5

... Max. transient thermal impedance I =f =25 ° parameter: D 0.5 0.2 0 0.05 0.02 0.01 single pulse - Rev. 1.2 2 Safe operating area I =f parameter 120 160 10 [° Typ. output characteristics I =f parameter [s] p page 5 SPW15N60CFD ); T =25 ° limited by on-state resistance 10 µs 100 µ [ =25 ° µ 2008-02-11 ...

Page 6

... T Rev. 1.2 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 1 1.6 1 1.2 1 6 0.6 0 Typ. transfer characteristics I =f parameter typ 100 140 180 0 [°C] j page 6 SPW15N60CFD ); T =150 ° 6 5 [A] D |>2 DS(on)max j 25 °C 150 ° [ 2008-02-11 ...

Page 7

... Rev. 1.2 10 Forward characteristics of reverse diode I =f parameter 120 V 480 [nC] 12 Avalanche energy E =f 480 420 360 300 240 25 °C 125 °C 180 120 [µs] page 7 SPW15N60CFD j 150 °C, 98% 25 °C 150 °C 25 °C, 98% 0 0.5 1 1 125 T [° 175 2008-02-11 ...

Page 8

... Rev. 1.2 14 Typ. capacitances C =f 100 140 180 [° Typ. reverse recovery charge Q =f(T );parameter 1.8 1.6 1.4 1.2 1 300 400 500 600 25 [V] DS page 8 SPW15N60CFD = MHz GS Ciss Coss Crss 100 200 300 400 V [V] DS =13 100 T [°C] j 500 125 2008-02-11 ...

Page 9

... Typ. reverse recovery charge Q =f(I ); parameter: di/ dt =100 A/µ 1.8 1.6 1.4 1 °C 0.8 0.6 0.4 0 Rev. 1.2 18 Typ. reverse recovery charge Q =f(di /dt ); parameter 125 °C 2.5 2 1 100 [A] S page 9 SPW15N60CFD =13 125 °C 25 °C 200 300 400 500 d i/d t [A/µs] 2008-02-11 ...

Page 10

... Definition of diode switching characteristics Rev. 1.2 page 10 SPW15N60CFD 2008-02-11 ...

Page 11

... PG-TO-247-3-1 Rev. 1.2 page 11 SPW15N60CFD 2008-02-11 ...

Page 12

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 (www.infine on.com). . page 12 SPW15N60CFD 2008-02-11 ...

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