IPB60R125C6 Infineon Technologies, IPB60R125C6 Datasheet
IPB60R125C6
Manufacturer Part Number
IPB60R125C6
Description
MOSFET N-CH 600V 30A TO263
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPB60R125C6.pdf
(18 pages)
Specifications of IPB60R125C6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 14.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
3.5V @ 960µA
Gate Charge (qg) @ Vgs
96nC @ 10V
Input Capacitance (ciss) @ Vds
2127pF @ 100V
Power - Max
219W
Mounting Type
Surface Mount
Package / Case
TO-263-2, D²Pak (2 leads + Tab), TO-263AB
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.11ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Operating Temperature Range
-55°C To +150°C
Transistor Case
RoHS Compliant
Transistor Case Style
TO-263
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB60R125C6
Manufacturer:
INFINEON
Quantity:
30 000
Company:
Part Number:
IPB60R125C6
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPB60R125C6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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... Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system ...