IPB60R125CP Infineon Technologies, IPB60R125CP Datasheet - Page 3
![MOSFET N-CH 600V 25A TO263](/photos/29/5/290584/to263_sml.jpg)
IPB60R125CP
Manufacturer Part Number
IPB60R125CP
Description
MOSFET N-CH 600V 25A TO263
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Specifications of IPB60R125CP
Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
3.5V @ 1.1mA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 100V
Power - Max
208W
Mounting Type
Surface Mount
Gate Charge Qg
53 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
25 A
Power Dissipation
208000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
25A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
125mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPB60R125CP
IPB60R125CPTR
SP000297368
IPB60R125CPTR
SP000297368
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPB60R125CP
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
IPB60R125CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.0
1)
2)
3)
4)
5)
is vertical without blown air
6)
7)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
related
Effective output capacitance, time
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
J-STD20 and JESD22
Pulse width t
Repetitive avalanche causes additional power losses that can be calculated as P
I
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB
C
C
SD
o(er)
o(tr)
=I
D
is a fixed capacitance that gives the same charging time as C
, di/dt<=200A/µs, V
6)
7)
is a fixed capacitance that gives the same stored energy as C
p
limited by T
DClink
j,max
=400V, V
peak
Symbol Conditions
C
C
C
C
t
t
t
t
Q
Q
Q
V
V
t
Q
I
<V
d(on)
r
d(off)
f
rr
rrm
plateau
SD
iss
oss
o(er)
o(tr)
gs
gd
g
rr
(BR)DSS
, T
V
f =1 MHz
V
to 480 V
V
V
R
V
V
V
T
V
di
j
<T
page 3
j
GS
GS
DD
GS
DD
GS
GS
R
G
=25 °C
F
=400 V, I
/dt =100 A/µs
=3.3 Ω
jmax
=0 V, V
=0 V, V
=400 V,
=10 V, I
=400 V, I
=0 to 10 V
=0 V, I
, identical low side and high side switch.
F
DS
DS
=16 A,
D
F
oss
=16 A,
=I
D
oss
=100 V,
=0 V
=16 A,
S
while V
while V
,
DS
DS
is rising from 0 to 80% V
AV
is rising from 0 to 80% V
min.
=E
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AR
*f.
Values
2500
typ.
120
110
300
430
5.0
0.9
15
50
12
18
53
42
5
5
9
IPB60R125CP
max.
1.2
70
DSS.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DSS.
Unit
pF
ns
nC
V
V
ns
µC
A
2007-02-06