IPB60R125CP Infineon Technologies, IPB60R125CP Datasheet - Page 3

• Manufacturer Part Number: IPB60R125CP
• Description: MOSFET N-CH 600V 25A TO263
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPB60R125CP

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 3.5V @ 1.1mA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 100V
• Power - Max: 208W
• Mounting Type: Surface Mount
• Gate Charge Qg: 53 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.125 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 125mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB60R125CP; IPB60R125CPTR; SP000297368

Rev. 1.0
1)
2)
3)
4)
5)
is vertical without blown air
6)
7)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
related
Effective output capacitance, time
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
J-STD20 and JESD22
Pulse width t
Repetitive avalanche causes additional power losses that can be calculated as P
I
Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB
C
C
SD
o(er)
o(tr)
=I
D
is a fixed capacitance that gives the same charging time as C
, di/dt<=200A/µs, V
6)
7)
is a fixed capacitance that gives the same stored energy as C
p
limited by T
DClink
j,max
=400V, V
peak
Symbol Conditions
C
C
C
C
t
t
t
t
Q
Q
Q
V
V
t
Q
I
<V
d(on)
r
d(off)
f
rr
rrm
plateau
SD
iss
oss
o(er)
o(tr)
gs
gd
g
rr
(BR)DSS
, T
V
f =1 MHz
V
to 480 V
V
V
R
V
V
V
T
V
di
j
<T
page 3
j
GS
GS
DD
GS
DD
GS
GS
R
G
=25 °C
F
=400 V, I
/dt =100 A/µs
=3.3 Ω
jmax
=0 V, V
=0 V, V
=400 V,
=10 V, I
=400 V, I
=0 to 10 V
=0 V, I
, identical low side and high side switch.
F
DS
DS
=16 A,
D
F
oss
=16 A,
=I
D
oss
=100 V,
=0 V
=16 A,
S
while V
while V
,
DS
DS
is rising from 0 to 80% V
AV
is rising from 0 to 80% V
min.
=E
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AR
*f.
Values
2500
typ.
120
110
300
430
5.0
0.9
15
50
12
18
53
42
5
5
9
IPB60R125CP
max.
1.2
70
DSS.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DSS.
Unit
pF
ns
nC
V
V
ns
µC
A
2007-02-06