SPA06N80C3 Infineon Technologies, SPA06N80C3 Datasheet

MOSFET N-CH 800V 6A TO220FP

SPA06N80C3

Manufacturer Part Number
SPA06N80C3
Description
MOSFET N-CH 800V 6A TO220FP
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of SPA06N80C3

Package / Case
TO-220FP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
900 mOhm @ 3.8A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3.9V @ 250µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
785pF @ 100V
Power - Max
39W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 Ohm @ 10 V
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
39000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
6A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
900mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000216302
SPA06N80C3IN
SPA06N80C3X
SPA06N80C3XK
SPA06N80C3XTIN
SPA06N80C3XTIN

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPA06N80C3
Manufacturer:
infineon
Quantity:
700
Part Number:
SPA06N80C3
Manufacturer:
Infineon Technologies
Quantity:
28 917
Part Number:
SPA06N80C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
SPA06N80C3
Quantity:
4 800
Company:
Part Number:
SPA06N80C3XKSA1
Quantity:
15 116
Rev. 2.9
CoolMOS
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute)
CoolMOS
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
Type
SPA06N80C3
TM
TM
800V designed for:
Power Transistor
3)
Package
PG-TO220-3
j
=25 °C, unless otherwise specified
2)
AR
AR
1)
3),4)
3),4)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
Marking
06N80C3
j
AS
AR
GS
tot
, T
stg
T
T
T
I
I
V
static
AC (f >1 Hz)
T
M2.5 screws
D
D
C
C
C
C
DS
=1.2 A, V
=6 A, V
page 1
=25 °C
=100 °C
=25 °C
=25 °C
=0…640 V
DD
DD
=50 V
Product Summary
V
R
Q
=50 V
DS
DS(on)max
g,typ
@ T
j
= 25°C
-55 ... 150
Value
230
±20
±30
3.8
0.2
18
50
39
50
6
6
SPA06N80C3
800
0.9
31
2008-10-15
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
V
nC

Related parts for SPA06N80C3

SPA06N80C3 Summary of contents

Page 1

... Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse =1 3), = 3), /dt V =0…640 static >1 Hz =25 °C tot stg M2.5 screws page 1 SPA06N80C3 Product Summary 25°C DS(on)max j Q g,typ Value 6 3.8 18 =50 V 230 0 ±20 ±30 39 -55 ... 150 50 800 V 0 Unit V/ °C Ncm 2008-10-15 ...

Page 2

... I =0.25 mA GS(th =800 DSS T =25 ° =800 =150 ° = GSS = =3 DS(on) T =25 ° = =3 =150 ° MHz, open drain G page 2 SPA06N80C3 Value Values min. typ. max 3 260 800 - - 870 2 100 - 0.78 0.9 - 2.1 - 1.2 Unit A V/ns Unit K/W °C - ...

Page 3

... = =25 °C d(off =640 plateau =25 ° =400 /dt =100 A/µ rrm < <T , identical low side and high side switch peak (BR)DSS j jmax while V oss while V oss page 3 SPA06N80C3 Values Unit min. typ. max. - 785 - 5 1 520 - µ * rising from DSS. ...

Page 4

... Rev. 2.9 2 Safe operating area I =f parameter 100 125 150 4 Typ. output characteristics I =f parameter page 4 SPA06N80C3 ); T =25 ° limited by on-state resistance 100 V [ =25 °C; t =10 µ µs 10 µs 100 µs 1000 2008-10-15 ...

Page 5

... T [°C] j Rev. 2.9 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter: V 4 5.5 V 2.6 2.2 1.8 1 [V] 8 Typ. transfer characteristics I =f parameter typ 5 0 100 140 180 page 5 SPA06N80C3 ); T =150 ° |>2 =10 µ DS(on)max p j 150 ° [ ° 2008-10-15 ...

Page 6

... I =f parameter 640 [nC] 12 Drain-source breakdown voltage V BR(DSS) 960 920 880 840 800 760 720 680 100 125 150 page 6 SPA06N80C3 ); t =10 µ 25°C (98°C) 25 °C 150 °C 0 0.5 1 1.5 V [ =0. -60 - 100 T [°C] j 150°C (98%) 2 140 180 2008-10-15 ...

Page 7

... Typ. capacitances C =f MHz Ciss Coss 1 10 Crss 100 200 V DS Rev. 2.9 14 Typ. Coss stored energy E = f(V oss 300 400 500 0 [V] page 7 SPA06N80C3 ) DS 100 200 300 400 500 600 V [V] DS 700 800 2008-10-15 ...

Page 8

... Definition of diode switching characteristics Rev. 2.9 page 8 SPA06N80C3 2008-10-15 ...

Page 9

... PG-TO220-3 (fully isolated): Outline Rev. 2.9 page 9 SPA06N80C3 2008-10-15 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.9 page 10 SPA06N80C3 2008-10-15 ...

Related keywords