SPA15N65C3 Infineon Technologies, SPA15N65C3 Datasheet - Page 4

• Manufacturer Part Number: SPA15N65C3
• Description: MOSFET N-CH 650V 15A TO220-3
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA15N65C3

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3.9V @ 675µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 25V
• Power - Max: 34W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.28 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 34000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 280mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000293730

Rev. 2.0
1 Power dissipation
P
3 Max. transient thermal impedance
Z
parameter: D=t
(thJC)
tot
=f(T
10
10
=f(t
10
10
35
30
25
20
15
10
5
0
-1
-2
1
0
C
0
p
)
)
0.02
0.05
0.01
0.5
0.1
0.2
single pulse
p
/T
40
T
t
C
p
80
[°C]
[s]
120
160
page 4
2 Safe operating area
I
parameter: t
4 Typ. output characteristics
I
parameter: V
D
D
=f(V
=f(V
10
10
10
10
50
40
30
20
10
DS
DS
0
-1
2
1
0
10
0
); T
); T
0
limited by on-state
resistance
C
p
j
=25 °C
GS
=25 °C; D =0
5
10
1
10
V
V
DS
DS
DC
[V]
[V]
6 V
7 V
5.5 V
5 V
4.5 V
15
10 ms
8 V
10
1 ms
2
SPA15N65C3
100 µs
10 V
10 µs
20
20 V
1 µs
2008-03-12
10
25
3