IPI80N04S3-03 Infineon Technologies, IPI80N04S3-03 Datasheet - Page 5

• Manufacturer Part Number: IPI80N04S3-03
• Description: MOSFET N-CH 40V 80A TO262-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPI80N04S3-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 120µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 7300pF @ 25V
• Power - Max: 188W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 188 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000261238

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
320
280
240
200
160
120
320
280
240
200
160
120
80
40
80
40
0
0
DS
GS
0
2
); T
); V
10 V
GS
j
j
DS
= 25 °C; SMD
3
= 6V
2
4
V
V
7 V
DS
GS
4
5
[V]
[V]
6
6
7
175 °C
-55 °C
25 °C
6.5 V
5.5 V
6 V
5 V
page 5
8
8
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
20
18
16
14
12
10
5
4
3
2
1
8
6
4
2
-60
= f(I
= f(T
0
5 V
D
j
); T
); I
GS
-20
D
5.5 V
j
IPI80N04S3-03, IPP80N04S3-03
= 25 °C; SMD
= 80 A; V
80
20
6 V
T
GS
I
j
D
160
60
[°C]
= 10 V; SMD
[A]
IPB80N04S3-03
100
6.5 V
240
140
2007-05-03
10 V
7 V
320
180