NTP5404NRG ON Semiconductor, NTP5404NRG Datasheet

MOSFET N-CH 40V 136A TO220AB

NTP5404NRG

Manufacturer Part Number
NTP5404NRG
Description
MOSFET N-CH 40V 136A TO220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTP5404NRG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
136A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
125nC @ 10V
Input Capacitance (ciss) @ Vds
7000pF @ 32V
Power - Max
167W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0045 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
136 A
Power Dissipation
167 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTP5404NRG
Manufacturer:
ON Semiconductor
Quantity:
500
Part Number:
NTP5404NRG
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
NTP5404NRG
Quantity:
50
NTB5404N, NTP5404N
Power MOSFET
40 V, 136 A, Single N−Channel, D
TO−220
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 4
MAXIMUM RATINGS
Continuous Drain
Current − R
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Power Dissipation −
R
Continuous Drain
Current − R
(Note 1)
Power Dissipation −
R
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (V
L = 1 mH, R
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Junction−to−Case (Drain)
Junction−to−Ambient (Note 1)
Low R
High Current Capability
Low Gate Charge
This is a Pb−Free Device
Electronic Brake Systems
Electronic Power Steering
Bridge Circuits
qJC
qJA
(Cu Area 1.127 sq in [2 oz] including traces).
(Note 1)
DS(on)
qJC
qJA
DD
G
= 25 W)
= 50 V, V
Parameter
Parameter
GS
(T
Steady
Steady
Steady
Steady
State
State
State
State
J
= 10 V, I
= 25°C unless otherwise stated)
t
p
= 10 ms
T
T
T
T
T
T
PK
C
A
C
C
A
A
= 100°C
= 100°C
= 25°C
= 25°C
= 25°C
= 25°C
= 45 A,
Symbol
Symbol
V
T
R
R
EAS
V
I
T
P
P
DSS
DM
STG
T
I
I
I
θJC
θJA
GS
D
D
S
J
D
D
L
,
2
−55 to
Value
1000
PAK &
24.2
Max
±20
136
167
258
175
260
5.3
0.9
40
96
17
75
28
1
Units
°C/W
°C/W
Unit
mJ
°
°C
W
W
V
V
A
A
A
A
C
†For information on tape and reel specifications,
1
NTB5404NT4G
NTP5404NRG
1
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
G
A
Y
WW
N−Channel
V
2
(BR)DSS
2
Device
3
40 V
3
ORDERING INFORMATION
= Pb−Free Device
= Assembly Location
= Year
= Work Week
4
G
http://onsemi.com
CASE 221A
TO−220AB
3.5 mW @ 10 V
STYLE 5
CASE 418B
R
(Pb−Free)
(Pb−Free)
Package
STYLE 2
DS(ON)
TO−220
D
D
2
D
2
PAK
PAK
Publication Order Number:
S
TYP
800 / Tape & Reel
50 Units / Rail
NTP5404NRG
1
DIAGRAMS
NTB5404NG
AYWW
Shipping†
MARKING
NTB5404N/D
(Note 1)
I
D
136 A
MAX
AYWW

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NTP5404NRG Summary of contents

Page 1

... MARKING DIAGRAMS 2 D PAK NTB5404NG CASE 418B AYWW STYLE TO−220AB CASE 221A NTP5404NRG STYLE 5 AYWW = Pb−Free Device = Assembly Location = Year = Work Week ORDERING INFORMATION Package Shipping† PAK 800 / Tape & Reel (Pb−Free) TO−220 50 Units / Rail (Pb−Free) Publication Order Number: ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...

Page 3

175 150 5 V 125 100 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics ...

Page 4

10000 C iss 8000 C rss 6000 4000 C oss 2000 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE ...

Page 5

D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 P (pk DUTY CYCLE 0.001 0.01 0.1 t, TIME (s) Figure 12. Thermal Response http://onsemi.com 5 R (t) ...

Page 6

... M 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 16.155 2X 1.016 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B− ...

Page 7

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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