NTP5404NRG ON Semiconductor, NTP5404NRG Datasheet - Page 2

• Manufacturer Part Number: NTP5404NRG
• Description: MOSFET N-CH 40V 136A TO220AB
• Manufacturer: ON Semiconductor

Specifications of NTP5404NRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 136A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 125nC @ 10V
• Input Capacitance (ciss) @ Vds: 7000pF @ 32V
• Power - Max: 167W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0045 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 136 A
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS, V
SWITCHING CHARACTERISTICS, V
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
GS
GS
V
= 10 V (Note 3)
= 5 V (Note 3)
V
(T
V
(BR)DSS
Symbol
V
GS(TH)
Q
R
Q
t
t
(BR)DSS
J
C
C
t
t
d(OFF)
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
Q
DS(on)
d(ON)
d(ON)
V
g
DSS
GSS
G(TH)
t
= 25°C unless otherwise stated)
OSS
RSS
RR
t
t
FS
ISS
t
t
t
t
GS
GD
SD
RR
a
b
r
f
r
f
/T
/T
J
J
V
GS
http://onsemi.com
V
V
V
V
V
V
V
V
V
I
V
DS
GS
GS
V
S
GS
GS
V
V
I
I
= 0 V, dI
GS
DS
GS
GS
D
D
GS
GS
= 20 A
GS
DS
= 0 V,
= 40 V
= 40 A, R
= 20 A, R
= 0 V,
Test Condition
= 10 V, V
= 10 V, V
= 0 V, f = 1.0 MHz,
= 0 V, V
= V
= 5 V, V
= 0 V, I
= 5.0 V, I
= 10 V, I
= 10 V, I
V
I
I
DS
D
S
DS
2
SD
= 40 A
= 20 A
, I
= 32 V
/dt = 100 A/ms,
D
GS
D
DD
G
G
DD
DS
= 250 mA
D
D
D
= 250 mA
= 2.5 W
= 2.5 W
= ±30 V
T
= 40 A
= 15 A
= 20 V,
T
= 15 A
= 32 V,
= 32 V,
T
T
J
J
J
J
= 100°C
= 125°C
= 25°C
= 25°C
Min
1.5
40
4300
1075
−8.2
12.5
0.65
Typ
450
125
175
140
3.5
5.1
5.5
0.8
34
35
55
10
65
85
85
25
46
62
75
38
38
±100
7000
1700
1000
Max
1.0
3.5
4.5
7.0
1.1
10
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
ns
ns
ns
V
V
S
V