BSC600N25NS3 G Infineon Technologies, BSC600N25NS3 G Datasheet - Page 7
![MOSFET N-CH 250V 25A TDSON-8](/photos/29/5/290580/tdson8_sml.jpg)
BSC600N25NS3 G
Manufacturer Part Number
BSC600N25NS3 G
Description
MOSFET N-CH 250V 25A TDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSC600N25NS3_G.pdf
(9 pages)
Specifications of BSC600N25NS3 G
Package / Case
8-TSDSON
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
4V @ 90µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
2350pF @ 100V
Power - Max
125W
Mounting Type
Surface Mount
Gate Charge Qg
22 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
60 mOhms
Forward Transconductance Gfs (max / Min)
49 S, 25 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
25 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSC600N25NS3 G
BSC600N25NS3 GTR
BSC600N25NS3 GTR
13 Avalanche characteristics
I
15 Drain-source breakdown voltage
V
100
280
270
260
250
240
230
220
t
10
1
-60
1
R
T
T
I
-20
10
20
t
T
AV
j
60
[°C]
[µs]
100
100
140
1000
180
14 Typ. gate charge
V
16 Gate charge waveforms
Q
V
10
V
Q
8
6
4
2
0
0
V
I
Q
5
10
Q
Q
gate
g
Q
[nC]
Q
BSC600N25NS3 G
15
20
Q
g ate
25