IPA60R299CP Infineon Technologies, IPA60R299CP Datasheet
IPA60R299CP
Manufacturer Part Number
IPA60R299CP
Description
MOSFET N-CH 650V 11A TO220-3
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Specifications of IPA60R299CP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3.5V @ 440µA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 100V
Power - Max
33W
Mounting Type
Through Hole
Package / Case
TO-220FP
Transistor Polarity
N Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
299mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.299 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
33 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000096438
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPA60R299CP
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPA60R299CP
Manufacturer:
INF
Quantity:
20 000
Company:
Part Number:
IPA60R299CP/6R299P
Manufacturer:
TOSHIBA
Quantity:
5 000
for industrial grade applications
; Halogen free mold compound
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IPA60R299CP Summary of contents
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