IPB100N10S3-05 Infineon Technologies, IPB100N10S3-05 Datasheet - Page 6

• Manufacturer Part Number: IPB100N10S3-05
• Description: MOSFET N-CH 100V 100A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB100N10S3-05

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 240µA
• Gate Charge (qg) @ Vgs: 176nC @ 10V
• Input Capacitance (ciss) @ Vds: 11570pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0048 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB100N10S3-05; IPB100N10S3-05TR; SP000261243

Rev. 1.0
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
10
10
10
10
3.5
2.5
1.5
= f(T
4
3
2
3
3
2
2
1
1
0
0
SD
-60
0
0
)
j
); V
D
j
0.2
0.2
-20
GS
= V
0.4
0.4
20
DS
175 °C
175 °C
240 µA
0.6
0.6
V
V
T
SD
SD
j
60
[°C]
25 °C
25 °C
[V]
[V]
0.8
0.8
1200 µA
100
1
1
140
1.2
1.2
180
1.4
1.4
page 6
10 Typ. capacitances
C = f(V
12 Typ. avalanche characteristics
I
parameter: T
A S
= f(t
1000
100
10
10
10
10
10
1
4
3
2
1
AV
DS
0.1
0
)
); V
j(start)
GS
IPI100N10S3-05, IPP100N10S3-05
5
= 0 V; f = 1 MHz
1
10
V
t
AV
DS
15
10
[µs]
[V]
150 °C
IPB100N10S3-05
20
100
100 °C
25
2008-02-11
Coss
25 °C
Crss
Ciss
1000
30