NTB35N15T4G ON Semiconductor, NTB35N15T4G Datasheet - Page 6

• Manufacturer Part Number: NTB35N15T4G
• Description: MOSFET N-CH 150V 37A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB35N15T4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 18.5A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 3200pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohms
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 37 A
• Power Dissipation: 178 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB35N15T4GOS; NTB35N15T4GOS; NTB35N15T4GOSTR

1000
100
0.1
10
1
0.1
0.01
1.0
0.1
V
SINGLE PULSE
T
Figure 11. Maximum Rated Forward Biased
0.00001
C
GS
= 25°C
0.02
= 20 V
0.05
D = 0.5
0.1
V
0.2
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.0
SINGLE PULSE
Safe Operating Area
R
THERMAL LIMIT
PACKAGE LIMIT
0.01
DS(on)
0.0001
LIMIT
10
Figure 14. Diode Reverse Recovery Waveform
I
S
Figure 13. Thermal Response
100
SAFE OPERATING AREA
0.001
t
1 ms
10 ms
p
10 ms
100 ms
dc
http://onsemi.com
NTB35N15
1000
di/dt
t, TIME (ms)
t
a
6
P
(pk)
t
rr
t
DUTY CYCLE, D = t
0.01
b
I
S
700
600
500
400
300
200
100
0.25 I
t
1
0
25
Figure 12. Maximum Avalanche Energy versus
t
2
S
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Starting Junction Temperature
50
TIME
1
0.1
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
75
(t) = r(t) R
− T
C
= P
qJC
(pk)
100
1.0
1
R
qJC
(t)
125
I
D
= 21.6 A
10
150