NTB35N15T4G ON Semiconductor, NTB35N15T4G Datasheet - Page 2

• Manufacturer Part Number: NTB35N15T4G
• Description: MOSFET N-CH 150V 37A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB35N15T4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 18.5A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 3200pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.05 Ohms
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 37 A
• Power Dissipation: 178 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB35N15T4GOS; NTB35N15T4GOS; NTB35N15T4GOSTR

3. Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 3 & 4)
BODY−DRAIN DIODE RATINGS (Note 3)
Drain−to−Source Breakdown Voltage
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
Drain−to−Source On−Voltage
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Diode Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
V
(V
(V
(V
DS
GS
GS
GS
GS
GS
GS
= V
= 0 Vdc, I
= 0 Vdc, V
= 0 Vdc, V
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
GS,
I
D
= 250 mAdc)
D
DS
DS
D
D
D
= 250 mAdc)
= 18.5 Adc)
= 18.5 Adc, T
= 18.5 Adc)
= 150 Vdc, T
= 150 Vdc, T
Characteristic
DS
GS
= 10 Vdc, I
J
J
J
= ± 20 Vdc, V
= 125°C)
= 25°C)
= 125°C)
(I
S
= 37 Adc, V
(T
(V
(V
(V
C
(I
(I
DS
DS
DD
S
= 25°C unless otherwise noted)
S
D
= 37 Adc, V
= 37 Adc, V
= 18.5 Adc)
= 120 Vdc, I
= 120 Vdc, I
= 25 Vdc, V
dI
DS
V
V
S
f = 1.0 MHz)
R
GS
GS
/dt = 100 A/ms)
GS
= 0)
G
= 10 Vdc,
= 10 Vdc)
= 9.1 W)
= 0 Vdc, T
http://onsemi.com
GS
GS
GS
D
D
NTB35N15
= 37 Adc,
= 37 Adc,
= 0 Vdc)
= 0 Vdc,
= 0 Vdc,
J
2
= 125°C)
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
C
Q
DS(on)
DS(on)
C
V
GS(th)
C
Q
Q
Q
g
d(on)
d(off)
DSS
GSS
t
t
t
FS
oss
t
t
SD
rss
RR
iss
rr
a
b
tot
gs
gd
r
f
Min
150
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−8.56
0.042
2275
1.55
1.00
0.88
1.14
Typ
240
450
125
120
170
112
2.9
26
90
20
90
70
14
32
58
−
−
−
−
−
0.050
0.120
± 100
3200
Max
1.78
650
175
225
175
210
100
5.0
4.0
1.5
50
35
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
mC
pF
ns
ns
W