BSC105N10LSF G Infineon Technologies, BSC105N10LSF G Datasheet
BSC105N10LSF G
Manufacturer Part Number
BSC105N10LSF G
Description
MOSFET N-CH 100V 90A TDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSC105N10LSF_G.pdf
(10 pages)
Specifications of BSC105N10LSF G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10.5 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
2.4V @ 110µA
Gate Charge (qg) @ Vgs
53nC @ 10V
Input Capacitance (ciss) @ Vds
3900pF @ 50V
Power - Max
156W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
8mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000388502
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BSC105N10LSF G Summary of contents
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