IPB100N08S2-07 Infineon Technologies, IPB100N08S2-07 Datasheet - Page 4

• Manufacturer Part Number: IPB100N08S2-07
• Description: MOSFET N-CH 75V 100A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB100N08S2-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.1 m Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000219044

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
1000
= f(T
100
350
300
250
200
150
100
10
50
1
0
0.1
DS
0
C
); T
); V
p
C
GS
= 25 °C; D = 0
≥ 6 V
50
1
V
T
C
DS
100
[°C]
[V]
1 ms
10
100 µs
150
10 µs
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
120
100
10
10
10
= f(t
10
80
60
40
20
0
-1
-2
-3
0
C
10
); V
0
p
-7
0.01
0.05
)
0.1
0.5
GS
10
IPP100N08S2-07, IPI100N08S2-07
≥ 10 V
p
-6
/T
single pulse
50
10
-5
10
T
t
-4
C
100
p
[°C]
[s]
10
-3
IPB100N08S2-07
10
150
-2
10
2006-03-03
-1
200
10
0