BUZ73 Infineon Technologies, BUZ73 Datasheet - Page 6

• Manufacturer Part Number: BUZ73
• Description: MOSFET N-CH 200V 7A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ73

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ73IN; BUZ73X; BUZ73XK; BUZ73XTIN; BUZ73XTIN; SP000011372

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Rev. 2.3
D
I
D
I
DS
D
= ƒ( V
≥
2 x I
13
11
10
16
12
10
A
A
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
DS
0
0
D
)
P
x R
tot
p
1
p
= 80 µs
= 40W
= 80 µs
DS(on)max
2
2
3
4
l
4
k
j
D
5
i
= f ( V
h
6
6
g
GS
7
)
8
8
e
c
a
f
d
b
V
V
V GS [V]
V
d
e
f
g
h
i
j
k 10.0
l
GS
a
b
c
DS
V
20.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
10
11
Page 6
Typ. forward transconductance g
parameter: t
V
R
g
Typ. drain-source on-resistance
R
parameter: V
fs
DS
DS (on)
DS (on)
≥
2 x I
6.0
5.0
4.5
4.0
3.5
3.0
2.0
2.5
1.5
1.0
0.5
0.0
1.3
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
S
Ω
0
0
D
= ƒ( I
V
V
x R
GS
GS
4.5
4.0
a
a
p
[V] =
[V] =
= 80 µs,
D
GS
DS(on)max
5.0
2
b
2
)
a
5.5
c
4
6.0
4
d
b
6.5
e
6
7.0
6
f
c
7.5
fs
g
8
= f
8
8.0
h
( I
d
10
D
9.0
i
)
2009-03-25
BUZ 73
10.0
A
j
I
D
I
A
D
e
20.0
k
k
j
h
f
12
14
g
i