SPP12N50C3 Infineon Technologies, SPP12N50C3 Datasheet - Page 3

• Manufacturer Part Number: SPP12N50C3
• Description: MOSFET N-CH 560V 11.6A TO-220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPP12N50C3

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 560V
• Current - Continuous Drain (id) @ 25° C: 11.6A
• Vgs(th) (max) @ Id: 3.9V @ 500µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.6 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014459; SPP12N50C3IN; SPP12N50C3X; SPP12N50C3XK; SPP12N50C3XTIN; SPP12N50C3XTIN

Electrical Characteristics, at T
Parameter
Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 Limited only by maximum temperature
2 Repetitve avalanche causes additional power losses that can be calculated as P
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4 Soldering temperature for TO-263: 220°C, reflow
5 C
6 C
7 I
Identical low-side and high-side switch.
Rev. 3.1
SD
o(er)
o(tr)
<=I
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
D
, di/dt<=400A/us, V
DClink
=400V, V
5)
6)
Symbol
g
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
j
d(on)
r
d(off)
f
= 25 °C, unless otherwise specified
fs
(plateau)
iss
oss
rss
o(er)
o(tr)
gs
gd
g
peak
<V
BR, DSS
V
V
V
V
V
I
V
f=1MHz
V
V
V
I
D
D
DS
GS
GS
DS
DD
DD
DD
GS
DD
=7A
=11.6A, R
≥ 2*I
=0V to 400V
=0V, V
=0V,
=380V, V
=400V, I
=400V, I
=0 to 10V
=400V, I
Page 3
Conditions
, T
D
j
*R
<T
DS
DS(on)max
G
j,max
D
D
D
GS
=6.8 Ω
=25V,
=11.6A
=11.6A,
=11.6A
=0/10V,
.
oss
oss
SPI12N50C3, SPA12N50C3
while V
while V
,
min.
DS
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AV
is rising from 0 to 80% V
is rising from 0 to 80% V
=E
Values
AR
1200
typ.
400
*f.
26
49
30
45
92
10
45
5
5
8
8
8
SPP12N50C3
2009-11-30
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
V
Unit
S
pF
ns
DSS
DSS
.
.