BUZ73L Infineon Technologies, BUZ73L Datasheet - Page 6

• Manufacturer Part Number: BUZ73L
• Description: MOSFET N-CH 200V 7A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ73L

• Package / Case: TO-220AB
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 3.5A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 840pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 5 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7 A
• Power Dissipation: 40000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BUZ73L; BUZ73LIN; BUZ73LX; BUZ73LXK; SP000011374

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Rev. 2.3
D
I
D
I
DS
D
= ƒ( V
≥
2 x I
18
14
12
10
16
12
10
A
A
8
6
4
2
0
8
6
4
2
0
DS
0
0
D
)
P
x R
tot
p
1
p
= 80 µs
= 40W
= 80 µs
DS(on)max
2
2
3
4
k
l
j
4
i
h
g
f
e
D
5
6
= f ( V
6
GS
8
7
)
c
a
8
d
b
V GS [V]
V
V
V
a
b
c
d
e
f
g
h
i
j
k
l
GS
DS
V
10.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
7.0
8.0
10
12
Page 6
Typ. forward transconductance g
parameter: t
V
R
g
Typ. drain-source on-resistance
R
parameter: V
fs
DS
DS (on)
DS (on)
≥
2 x I
12
10
1.3
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
S
9
8
7
6
5
4
3
2
1
0
Ω
0
0
D
= ƒ( I
V
V
GS
x R
GS
2.0
2.5
a
a
p
[V] =
= 80 µs,
[V] =
2
D
GS
DS(on)max
3.0
b
)
2
a
3.5
c
4
4.0
4
d
6
4.5
e
6
5.0
f
b
8
5.5
fs
g
= f
8
10
6.0
h
( I
7.0
D
i
BUZ 73L
)
12
10
2009-03-31
8.0
j
I
D
I
D
A
c
A
10.0
k
h
f
j
d
15
k
e
i
g
13