IPB023N04N G Infineon Technologies, IPB023N04N G Datasheet

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IPB023N04N G

Manufacturer Part Number
IPB023N04N G
Description
MOSFET N-CH 40V 90A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB023N04N_G.pdf (10 pages)

Specifications of IPB023N04N G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.3 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 95µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
10000pF @ 20V
Power - Max
167W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
1.9mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-263
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0023 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
90 A
Power Dissipation
167 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000391519
Features
Maximum ratings,
Parameter
Type
Package
Marking
™
3 Power-Transistor
T
R
Symbol Conditions
I
I
I
E
V
V
V
T
T
I
R
T
T
Product Summary
V
R
I
Value
IPB023N04N G
IPP023N04N G
Unit

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IPB023N04N G Summary of contents

Page 1

... Power-Transistor Features R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions IPP023N04N G IPB023N04N G Value Unit ...

Page 2

... Maximum ratings, T Parameter Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions Symbol Conditions IPP023N04N G IPB023N04N G Value Unit Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode Symbol Conditions IPP023N04N G IPB023N04N G Values Unit min. typ. max. ...

Page 4

... Power dissipation P T 200 150 100 100 T [° Safe operating area [ Drain current 100 150 200 0 4 Max. transient thermal impedance IPP023N04N G IPB023N04N G 50 100 150 T [° [s] p 200 0 10 ...

Page 5

... Typ. output characteristics 400 300 200 100 [ Typ. transfer characteristics 400 300 200 100 [ Typ. drain-source on resistance Typ. forward transconductance 250 200 150 100 IPP023N04N G IPB023N04N 120 160 I [ 120 160 I [A] D 200 200 ...

Page 6

... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 100 140 180 -60 12 Forward characteristics of reverse diode IPP023N04N G IPB023N04N - 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

Page 7

... Avalanche characteristics 100 [µ Drain-source breakdown voltage -60 - [° Typ. gate charge Gate charge waveforms 100 140 180 IPP023N04N G IPB023N04N [nC] gate 100 g ate ...

Page 8

... Package Outline Footprint: PG-TO263-3 Packaging: IPP023N04N G IPB023N04N G ...

Page 9

... Package Outline PG-TO220-3 IPP023N04N G IPB023N04N G ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPP023N04N G IPB023N04N G ...

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