IPI12CNE8N G Infineon Technologies, IPI12CNE8N G Datasheet - Page 8

• Manufacturer Part Number: IPI12CNE8N G
• Description: MOSFET N-CH 85V 67A TO262-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPI12CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.6 mOhm @ 67A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 4V @ 83µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 40V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0126 Ohms
• Drain-source Breakdown Voltage: 85 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000208929