IPB80N06S2-H5 Infineon Technologies, IPB80N06S2-H5 Datasheet
IPB80N06S2-H5
Specifications of IPB80N06S2-H5
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IPB80N06S2-H5 Summary of contents
Page 1
... Rev. 1.0 Product Summary PG-TO263-3-2 Ordering Code SP0002-18162 SP0002-18155 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =25 °C tot stg page 1 IPB80N06S2-H5 IPP80N06S2-H5 DS (SMD version) DS(on),max D PG-TO220-3-1 Marking 2N06H5 2N06H5 Value = 320 700 ±20 300 -55 ... +175 55/175/ 5 Unit °C 2006-03-13 ...
Page 2
... (BR)DSS =230 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A DS( SMD version page 2 IPB80N06S2-H5 IPP80N06S2-H5 Values min. typ. max 0 2.1 3 100 = 100 - 4.6 5.5 - 4.3 5.2 Unit K µA nA mΩ 2006-03-13 ...
Page 3
... =25 ° S,pulse = =25 ° = /dt =100 A/µ = /dt =100 A/µ 0.5 K/W the chip is able to carry 170 A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB80N06S2-H5 IPP80N06S2-H5 Values min. typ. max. - 4400 = 1100 - 280 - = 116 - 5 0 130 ...
Page 4
... DS C parameter 1000 100 Rev. 1.0 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µs 100 µ 100 [V] page 4 IPB80N06S2-H5 IPP80N06S2- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2006-03-13 ...
Page 5
... V GS Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 5 4 [V] 8 Typ. Forward transconductance parameter: g 200 175 150 125 100 °C -55 ° [V] page 5 IPB80N06S2-H5 IPP80N06S2- ° [ 25° 100 150 I [ 100 120 200 2006-03-13 ...
Page 6
... Typ. gate threshold voltage V = f(T GS(th) parameter 3.5 3 2.5 2 1.5 1 100 140 180 12 Typical forward diode characteristicis IF = f(V SD parameter Ciss 2 10 Coss Crss [V] page 6 IPB80N06S2-H5 IPP80N06S2- 1150 µA 230 µA -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] SD 140 180 1.2 1.4 ...
Page 7
... A 600 400 200 100 T [° Typ. drain-source breakdown voltage BR(DSS -60 - [°C] j Rev. 1.0 14 Typ. gate charge V = f(Q GS gate 150 200 0 16 Gate charge waveforms 100 140 180 page 7 IPB80N06S2-H5 IPP80N06S2- pulsed 100 Q [nC] gate gate gate 2006-03-13 150 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPB80N06S2-H5 IPP80N06S2-H5 2006-03-13 ...