IPP80N06S2L-06 Infineon Technologies, IPP80N06S2L-06 Datasheet - Page 2

• Manufacturer Part Number: IPP80N06S2L-06
• Description: MOSFET N-CH 55V 80A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80N06S2L-06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 69A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 180µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3800pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218824

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
R
DSS
GSS
DS(on)
(BR)DSS
GS(th)
thJC
thJA
thJA
DS(on)
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
SMD version
V
V
SMD version
j
j
GS
DS
DS
DS
GS
GS
GS
GS
GS
=25 °C
=125 °C
page 2
=V
=55 V, V
=55 V, V
=0 V, I
=20 V, V
=4.5 V, I
=4.5 V, I
=10 V, I
=10 V, I
2
Conditions
cooling area
GS
, I
2)
D
D
= 1 mA
D
D
=180 µA
D
D
GS
GS
DS
=69 A,
=69 A,
=69 A
=69 A,
=0 V,
=0 V,
=0 V
5)
min.
1.2
55
-
-
-
-
-
-
-
-
-
-
-
Values
0.01
typ.
1.6
6.1
5.8
6.1
4.8
1
1
-
-
-
-
-
IPB80N06S2L-06
IPP80N06S2L-06
max.
100
100
0.6
2.0
8.4
8.1
6.3
62
62
40
1
6
-
2006-03-13
Unit
K/W
V
µA
nA
m
mΩ