IPP80N06S2-07 Infineon Technologies, IPP80N06S2-07 Datasheet
IPP80N06S2-07
Specifications of IPP80N06S2-07
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IPP80N06S2-07 Summary of contents
Page 1
... PG-TO263-3-2 PG-TO220-3-1 Ordering Code SP0002-18818 SP0002-18810 SP0002-18817 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =25 °C tot stg page 1 IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 DS (SMD version) DS(on),max D PG-TO262-3-1 Marking 2N0607 2N0607 2N0607 Value = 320 530 ±20 250 -55 ... +175 55/175/ 6 Unit °C 2006-03-13 ...
Page 2
... (BR)DSS =180 µA GS(th = DSS T =25 ° = =125 ° = GSS = =68 A, DS( SMD version page 2 IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 Values min. typ. max 0 2.1 3 100 = 100 - 5.6 6.6 - 5.3 6.3 Unit K µA nA mΩ 2006-03-13 ...
Page 3
... = = plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ 0.6 K/W the chip is able to carry 135 A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 Values min. typ. max. - 3400 = 880 - 215 - = 4 0 Unit - 110 ...
Page 4
... V DS Rev. 1.0 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µs 100 µ 100 [V] page 4 IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2006-03-13 ...
Page 5
... V GS Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 5 4 [V] 8 Typ. Forward transconductance parameter: g 200 175 150 125 100 75 50 175 ° °C -55 ° [V] page 5 IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2- ° 5 [ 25° 100 150 I [ 100 120 200 2006-03-13 ...
Page 6
... GS(th) parameter 3.5 3 2.5 2 1.5 1 100 140 180 12 Typical forward diode characteristicis IF = f(V SD parameter Ciss 2 10 Coss 1 10 Crss [V] page 6 IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2- 900 µA 180 µA -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] SD 140 180 1.2 1.4 ...
Page 7
... A 500 400 300 200 100 100 T [° Typ. drain-source breakdown voltage BR(DSS -60 - [°C] j Rev. 1.0 14 Typ. gate charge V = f(Q GS gate 150 200 0 16 Gate charge waveforms 100 140 180 page 7 IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2- pulsed [nC] gate gate gate 2006-03- 100 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPP80N06S2-07, IPI80N06S2-07 page 8 IPB80N06S2-07 2006-03-13 ...