IPB80N04S2-H4 Infineon Technologies, IPB80N04S2-H4 Datasheet - Page 7

• Manufacturer Part Number: IPB80N04S2-H4
• Description: MOSFET N-CH 40V 80A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB80N04S2-H4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 148nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218165

Rev. 1.1
13 Avalanche energy
E
parameter: I
15 Drain-source breakdown voltage
V
AS
BR(DSS)
= f(T
3000
2500
2000
1500
1000
500
48
46
44
42
40
38
36
0
-60
= f(T
25
j
)
20 A
40 A
80 A
D
j
); I
-20
D
= 1 mA
20
75
T
T
j
j
60
[°C]
[°C]
100
125
140
180
175
page 7
14 Typ. gate charge
V
16 Gate charge waveforms
GS
V
V
= f(Q
GS
GS
12
10
8
6
4
2
0
0
gate
Q
Q
gs
gs
); I
20
IPP80N04S2-H4, IPI80N04S2-H4
D
= 80 A pulsed
Q
Q
40
g
g
Q
Q
Q
gate
gd
gd
60
[nC]
IPB80N04S2-H4
80
8 V
Q
Q
gate
gate
100
2008-02-22
32 V
120