BSC118N10NS G Infineon Technologies, BSC118N10NS G Datasheet

BSC118N10NS G

Manufacturer Part Number

BSC118N10NS G

Description

MOSFET N-CH 100V 71A TDSON-8

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Datasheet

1.BSC118N10NS_G.pdf (10 pages)

Specifications of BSC118N10NS G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

11.8 mOhm @ 50A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

71A

Vgs(th) (max) @ Id

4V @ 70µA

Gate Charge (qg) @ Vgs

56nC @ 10V

Input Capacitance (ciss) @ Vds

3700pF @ 50V

Power - Max

114W

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Transistor Polarity

N Channel

Drain Source Voltage Vds

100V

On Resistance Rds(on)

10mohm

Rds(on) Test Voltage Vgs

10V

Voltage Vgs Max

20V

Operating Temperature Range

-55Â°C To +150Â°C

Configuration

Single Quad Drain Triple Source

Resistance Drain-source Rds (on)

0.0118 Ohms

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

11 A

Power Dissipation

114 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

SP000379599

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