BSC019N02KS G Infineon Technologies, BSC019N02KS G Datasheet - Page 2
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BSC019N02KS G
Manufacturer Part Number
BSC019N02KS G
Description
MOSFET N-CH 20V 100A TDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSC019N02KS_G.pdf
(10 pages)
Specifications of BSC019N02KS G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.95 mOhm @ 50A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.2V @ 350µA
Gate Charge (qg) @ Vgs
85nc @ 4.5V
Input Capacitance (ciss) @ Vds
13000pF @ 10V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
1.6mohm
Rds(on) Test Voltage Vgs
4.5V
Voltage Vgs Max
12V
Operating Temperature Range
-55°C To +150°C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.00195 Ohms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
30 A
Power Dissipation
2.8 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000307376