IPP80P03P4L-04 Infineon Technologies, IPP80P03P4L-04 Datasheet - Page 2

• Manufacturer Part Number: IPP80P03P4L-04
• Description: MOSFET P-CH 30V 80A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80P03P4L-04

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 253µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 11300pF @ 25V
• Power - Max: 137W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
thJA
DS(on)
-
-
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
SMD version
V
V
SMD version
j
j
GS
DS
DS
DS
GS
GS
GS
GS
GS
=25°C
=125°C
page 2
=V
=-24V, V
=-24V, V
=0V, I
=-16V, V
=-4.5V, I
=-4.5V, I
=-10V, I
=-10V, I
2
Conditions
cooling area
GS
, I
2)
D
= -1mA
D
D
D
=-253µA
D
D
GS
GS
DS
=-80A
=-80A,
=-80A
=-80A,
=0V,
=0V,
=0V
3)
IPI80P03P4L-04, IPP80P03P4L-04
min.
-1.0
-30
-
-
-
-
-
-
-
-
-
-
-
Values
-0.05
typ.
-1.5
-20
5.0
4.7
3.7
3.4
-
-
-
-
-
-
IPB80P03P4L-04
max.
-200
-100
-2.0
1.1
6.7
4.4
4.1
62
62
40
-1
7
-
2008-07-29
Unit
K/W
V
µA
nA
m