IPP80N06S2L-09 Infineon Technologies, IPP80N06S2L-09 Datasheet - Page 7

• Manufacturer Part Number: IPP80N06S2L-09
• Description: MOSFET N-CH 55V 80A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP80N06S2L-09

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 52A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 125µA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 2620pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218742

Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. drain-source breakdown voltage
V
AS
BR(DSS)
700
600
500
400
300
200
100
= f(T
0
66
64
62
60
58
56
54
52
50
48
46
0
-60
= f(T
60 A
80 A
j
50 A
)
D
j
); I
-20
D
50
= 1 mA
20
T
T
100
j
j
60
[°C]
[°C]
100
150
140
180
200
page 7
14 Typ. gate charge
V
16 Gate charge waveforms
GS
V
V
= f(Q
GS
GS
12
10
8
6
4
2
0
0
gate
Q
Q
gs
gs
); I
D
20
= 80 A pulsed
Q
Q
g
g
40
Q
Q
Q
gate
gd
gd
[nC]
60
IPB80N06S2L-09
IPP80N06S2L-09
11 V
Q
Q
gate
gate
80
44 V
2006-03-13
100