NTB5412NT4G ON Semiconductor, NTB5412NT4G Datasheet - Page 4

• Manufacturer Part Number: NTB5412NT4G
• Description: MOSFET N-CH 60V 60A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB5412NT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 0V
• Input Capacitance (ciss) @ Vds: 3220pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11.1 Ohms
• Forward Transconductance Gfs (max / Min): 58 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

5000
4500
4000
3500
3000
2500
2000
1500
1000
1000
1000
500
100
100
0.1
10
10
0
1
1
1
0.1
0
C
V
I
V
D
Figure 9. Resistive Switching Time Variation
Figure 11. Maximum Rated Forward Biased
DD
GS
rss
= 60 A
= 48 V
= 10 V
V
10
DS
V
0 V ≤ V
Single Pulse
T
Figure 7. Capacitance Variation
DS
C
, DRAIN−TO−SOURCE VOLTAGE (V)
t
f
= 25°C
R
Thermal Limit
Package Limit
, DRAIN−TO−SOURCE VOLTAGE (V)
R
DS(on)
G
t
r
t
Safe Operating Area
d(off)
, GATE RESISTANCE (W)
GS
vs. Gate Resistance
20
1
10 ms
≤ 10 V
Limit
dc
1 ms
30
10
TYPICAL PERFORMANCE CURVES
40
100 ms
10
C
C
iss
oss
t
d(on)
V
T
GS
J
50
= 25°C
10 ms
= 0 V
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100
100
60
4
200
150
100
10
60
50
40
30
20
10
50
0
8
6
4
2
0
0
0.4
25
0
Figure 12. Maximum Avalanche Energy vs.
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 8. Gate−to−Source Voltage vs. Total
GS
J
T
Q
= 25°C
J
, STARTING JUNCTION TEMPERATURE (°C)
1
0.5
= 0 V
10
V
Starting Junction Temperature
50
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
0.6
20
75
Q
0.7
2
30
Charge
Q
100
T
0.8
40
125
0.9
50
V
I
T
D
J
DS
I
D
= 60 A
= 25°C
150
= 60 A
= 48 V
1.0
60
175
1.1
70