NTB5412NT4G ON Semiconductor, NTB5412NT4G Datasheet - Page 3

MOSFET N-CH 60V 60A D2PAK

NTB5412NT4G

Manufacturer Part Number
NTB5412NT4G
Description
MOSFET N-CH 60V 60A D2PAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTB5412NT4G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
85nC @ 0V
Input Capacitance (ciss) @ Vds
3220pF @ 25V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11.1 Ohms
Forward Transconductance Gfs (max / Min)
58 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTB5412NT4G
Manufacturer:
ON Semiconductor
Quantity:
78
Part Number:
NTB5412NT4G
Manufacturer:
ON
Quantity:
12 500
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
100
80
60
40
20
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0
−50
0
2
1
5
Figure 3. On−Resistance vs. Gate−to−Source
I
V
D
GS
−25
= 60 A
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
V
10 V
= 10 V
DS
V
GS
1
, DRAIN−TO−SOURCE VOLTAGE (V)
6
T
, GATE−TO−SOURCE VOLTAGE (V)
J
0
, JUNCTION TEMPERATURE (°C)
25
2
7
Temperature
Voltage
50
75
3
8
TYPICAL PERFORMANCE CURVES
100
V
T
125
4
GS
I
T
9
D
J
J
= 30 A
= 25°C
= 25°C
= 4.5 V
http://onsemi.com
5.6 V
5.3 V
5.0 V
150
6 V
10
5
175
3
0.015
0.014
0.013
0.012
0.010
0.009
0.008
0.007
0.006
0.005
0.011
1000
100
100
10
80
60
40
20
0
10
3
5
Figure 4. On−Resistance vs. Drain Current and
V
T
Figure 6. Drain−to−Source Leakage Current
V
DS
T
J
10
GS
V
J
= 25°C
DS
≥ 10 V
= 25°C
= 0 V
V
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
15
GS
T
20
4
J
, GATE−TO−SOURCE VOLTAGE (V)
= 125°C
20
I
D
, DRAIN CURRENT (A)
25
Gate Voltage
30
vs. Voltage
5
T
T
J
T
J
30
J
= 125°C
= 150°C
= −55°C
35
V
GS
40
6
40
= 10 V
45
50
7
50
55 60
60
8

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