IPD60R520CP Infineon Technologies, IPD60R520CP Datasheet

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IPD60R520CP

Manufacturer Part Number
IPD60R520CP
Description
MOSFET N-CH 650V 6.8A TO-252
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheets

Specifications of IPD60R520CP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 3.8A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
6.8A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
630pF @ 100V
Power - Max
66W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
6.8A
Drain Source Voltage Vds
650V
On Resistance Rds(on)
520mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.52 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.8 A
Power Dissipation
66 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000405852

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD60R520CP
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
IPD60R520CP
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPD60R520CP
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.0
Features
• Lowest figure-of-merit R
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
CoolMOS CP is designed for:
• Hard switching SMPS topologies
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
CoolMOS
Type
IPD60R520CP
TM
Power Transistor
2)
j
Package
PG-TO252
=25 °C, unless otherwise specified
ON
x Q
AR
AR
1)
g
2),3)
2),3)
for target applications
Symbol Conditions
I
I
E
E
I
dv /dt
V
P
T
D
D,pulse
AR
j
AS
AR
GS
tot
, T
Marking
6R520P
stg
T
T
T
I
I
V
static
AC (f >1 Hz)
T
D
D
page 1
C
C
C
C
DS
=2.5 A, V
=2.5 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=0...480 V
DD
DD
Product Summary
V
R
Q
=50 V
=50 V
DS
DS(on),max
g,typ
@ T
j,max
@ T
j
= 25°C
-55 ... 150
Value
0.25
166
±20
±30
6.8
4.3
2.5
PG-TO252
17
50
66
IPD60R520CP
0.520 Ω
650
24
Unit
A
mJ
A
V/ns
V
W
°C
V
nC
2008-02-15

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IPD60R520CP Summary of contents

Page 1

... Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse =2 = 2 2), =0...480 static >1 Hz =25 °C tot stg page 1 IPD60R520CP @ T 650 j,max @ T = 25°C 0.520 Ω PG-TO252 Value 6.8 4.3 17 166 0.25 2.5 50 ±20 ±30 66 -55 ... 150 V nC Unit V/ °C 2008-02-15 ...

Page 2

... I =250 µA GS(th =600 DSS T =25 ° =600 =150 ° = GSS = =3 DS(on) T =25 ° = =3 =150 ° MHz, open drain G page 2 IPD60R520CP Value Unit 3 V/ns Values Unit min. typ. max 1.9 K 600 - - V 2 µ 100 nA Ω - 0.47 0.52 - 1.3 - Ω ...

Page 3

... =14.7Ω d(off =480 plateau =3 =25 ° =400 /dt =100 A/µ rrm < <T , identical low side and high side switch. peak (BR)DSS j jmax while V oss while V oss page 3 IPD60R520CP Values Unit min. typ. max. - 630 - 4 0.8 1 230 - ns - 2.5 - µ * rising from DSS ...

Page 4

... Max. transient thermal impedance Z =f(t ) thJC P parameter 0.2 0.1 0.05 0. 0.01 single pulse - Rev. 2.0 2 Safe operating area I =f parameter 120 160 [° Typ. output characteristics I =f parameter [s] p page 4 IPD60R520CP ); T =25 ° limited by on-state resistance 10 µs 100 µ [ =25 ° µ 2008-02-15 ...

Page 5

... T Rev. 2.0 6 Typ. drain-source on-state resistance R =f(I DS(on) parameter 3 5 3.2 2.8 2.4 2 1.6 1 Typ. transfer characteristics I =f parameter typ 100 140 180 0 [°C] j page 5 IPD60R520CP ); T =150 ° 6 5 [A] D |>2 DS(on)max j C °25 C °150 [ 2008-02-15 ...

Page 6

... Rev. 2.0 10 Forward characteristics of reverse diode I =f parameter 120 480 [nC] 12 Drain-source breakdown voltage V =f(T BR(DSS) 700 660 620 580 540 -60 100 140 180 [°C] j page 6 IPD60R520CP j 150 °C, 98% 25 °C 150 °C 25 °C, 98% 0.5 1 1 =0. - 100 140 T [° 180 2008-02-15 ...

Page 7

... Typ. capacitances C =f MHz Ciss 2 10 Coss 1 10 Crss 100 200 V Rev. 2.0 14 Typ. Coss stored energy E = f(V oss 300 400 500 0 [V] DS page 7 IPD60R520CP ) 100 200 300 400 500 V [V] DS 600 2008-02-15 ...

Page 8

... Definition of diode switching characteristics Rev. 2.0 page 8 IPD60R520CP 2008-02-15 ...

Page 9

... PG-TO252: Outlines Rev. 2.0 page 9 IPD60R520CP 2008-02-15 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 IPD60R520CP 2008-02-15 ...

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