IPB80P03P4L-04 Infineon Technologies, IPB80P03P4L-04 Datasheet - Page 3

• Manufacturer Part Number: IPB80P03P4L-04
• Description: MOSFET P-CH 30V 80A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB80P03P4L-04

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 253µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 11300pF @ 25V
• Power - Max: 137W
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
1)
2)
3)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Current is limited by bondwire; with an R
Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2)
2)
2)
2)
2)
2)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
thJC
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
= 1.1K/W the chip is able to carry -146A at 25°C.
V
f =1MHz
V
V
R
V
V
T
V
T
V
di
C
j
GS
DD
GS
DD
GS
GS
R
G
=25°C
F
page 3
=25°C
=-15V, I
/dt =-100A/µs
=3.5
=0V, V
=-15V,
=-10V, I
=-24V, I
=0 to -10V
=0V, I
Conditions
F
DS
=-80A,
F
2
=-80A,
D
D
(one layer, 70 µm thick) copper area for drain
=-25V,
=-80A,
=-80A,
IPI80P03P4L-04, IPP80P03P4L-04
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
8670
2350
typ.
140
125
-3.3
100
65
17
11
40
29
15
80
-
-
-
IPB80P03P4L-04
11300 pF
max.
3050
-320
130
160
-1.3
-80
38
30
-
-
-
-
-
-
-
2008-07-29
Unit
ns
nC
V
A
V
ns
nC