NDF08N50ZG ON Semiconductor, NDF08N50ZG Datasheet - Page 5

• Manufacturer Part Number: NDF08N50ZG
• Description: MOSFET N-CH 500V 7.5A TO-220FP
• Manufacturer: ON Semiconductor

Specifications of NDF08N50ZG

• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Mounting Type: Through Hole
• Power - Max: 31W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Drain To Source Voltage (vdss): 500V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 3.6A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.69 Ohms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 4.7 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 31 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
0.01
1.0
0.1
10
0.000001
50% (DUTY CYCLE)
5.0%
2.0%
1.0%
20%
10%
SINGLE PULSE
0.00001
Figure 13. Thermal Impedance (Junction−to−Case) for NDF08N50Z
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
0.0001
0.01
100
0.1
10
1
0.1
V
SINGLE PULSE
T
Figure 12. Maximum Rated Forward Biased
GS
C
= 25°C
v 30 V
V
Figure 14. Isolation Test Diagram
TYPICAL CHARACTERISTICS
DS
Safe Operating Area NDF08N50Z
0.001
, DRAIN−TO−SOURCE VOLTAGE (V)
1
http://onsemi.com
dc
R
THERMAL LIMIT
PACKAGE LIMIT
0.01
DS(on)
10 ms
PULSE TIME (s)
5
10
LIMIT
1 ms
100 ms
HEATSINK
0.110″ MIN
LEADS
0.1
100
10 ms
1.0
1000
10
R
Steady State
qJC
100
= 4.0°C/W
1000