NDF08N50ZG ON Semiconductor, NDF08N50ZG Datasheet
NDF08N50ZG
Specifications of NDF08N50ZG
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NDF08N50ZG Summary of contents
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... G (1) TO−220FP CASE 221D MARKING STYLE 1 DIAGRAM NDF08N50ZG or NDP08N50ZG AYWW Gate TO−220AB CASE 221A STYLE 5 Drain A = Location Code Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping NDF08N50ZG TO−220FP 50 Units/Rail NDP08N50ZG TO−220AB In Development Publication Order Number: NDF08N50Z/D S (3) Source ...
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THERMAL RESISTANCE Parameter Junction−to−Case (Drain) Junction−to−Ambient Steady State (Note 3) 3. Insertion mounted ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current Gate−to−Source Forward Leakage ON CHARACTERISTICS (Note 4) Static Drain−to−Source On−Resistance Gate Threshold ...
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V 16.0 14 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0.0 5.0 10.0 15 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 ...
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T = 150° 125° 100 150 200 250 300 350 400 450 500 V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Drain−to−Source Leakage Current versus Voltage 15.0 14.0 13.0 12.0 11.0 ...
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... Figure 13. Thermal Impedance (Junction−to−Case) for NDF08N50Z Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TYPICAL CHARACTERISTICS 100 ms ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...