IPB039N04L G Infineon Technologies, IPB039N04L G Datasheet
IPB039N04L G
Specifications of IPB039N04L G
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IPB039N04L G Summary of contents
Page 1
... J-STD20 and JESD22 Rev. 1.2 1) for target applications product (FOM) DS(on) DS(on) IPP039N04L G PG-TO220-3 039N04L Symbol Conditions =100 ° =25 °C D,pulse =25 ° = page 1 IPP039N04L G IPB039N04L G Product Summary DS(on),max I D Value =25 ° =100 ° =25 ° 400 80 = ± 3 Unit 2009-12-17 ...
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... C, unless otherwise specified (BR)DSS =45 µA GS(th = DSS T =25 ° = =125 ° = GSS =4 =80 A DS( |>2 DS(on)max = page 2 IPP039N04L G IPB039N04L G Value 94 -55 ... 175 55/175/56 Values min. typ. max 100 - 10 100 - 4.2 5.2 - 3.1 3 151 - Unit W ° C Unit K/W V µ 2009-12-17 ...
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... See figure 16 for gate charge parameter definition Rev. 1.2 Symbol Conditions C iss oss f =1 MHz C rss t d( d(off g(th = plateau g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPP039N04L G IPB039N04L G Values min. typ. max. - 4600 6100 = 820 1100 - 5 7.4 - 6.1 = 3.0 = 400 - 0.92 1 Unit 2009-12-17 ...
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... Rev. 1.2 2 Drain current I =f(T D 100 100 150 200 T [° Max. transient thermal impedance Z =f(t thJC parameter µs 10 µs 100 µ [V] DS page 4 IPP039N04L G IPB039N04L 100 T [° 0.5 0.2 0.1 -1 0.05 0.02 0.01 single pulse - [s] p 150 200 ...
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... DS(on)max parameter 250 200 150 100 Rev. 1.2 6 Typ. drain-source on resistance R DS(on) parameter 3 Typ. forward transconductance g =f(I fs 175 ° ° [V] GS page 5 IPP039N04L G IPB039N04L G =f =25 ° 3 120 I [ =25 ° 200 160 120 [ 160 200 80 100 2009-12-17 ...
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... Rev. 1.2 10 Typ. gate threshold voltage = GS(th) typ 60 100 140 180 T [° Forward characteristics of reverse diode I =f(V F parameter: T 1000 Ciss Coss Crss [V] DS page 6 IPP039N04L G IPB039N04L G =250 mA =f 2.5 2 1.5 1 0.5 0 -60 - 100 T [° 100 25 ° C 175 ° 0.0 0.5 1.0 ...
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... Avalanche characteristics = =f parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS -60 -20 20 Rev. 1.2 14 Typ. gate charge V =f(Q GS parameter °C 100 ° C 150 ° [µ Gate charge waveforms 60 100 140 180 T [° page 7 IPP039N04L G IPB039N04L =30 A pulsed gate [nC] gate s(th (th ate 2009-12-17 ...
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... Package Outline Footprint: Rev. 1.2 PG-TO220-3-1 Packaging: page 8 IPP039N04L G IPB039N04L G 2009-12-17 ...
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... Package Outline Rev. 1.2 PG-TO263-3 page 9 IPP039N04L G IPB039N04L G 2009-12-17 ...
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... Rev. 1.2 page 10 IPP039N04L G IPB039N04L G 2009-12-17 ...