IPD042P03L3 G Infineon Technologies, IPD042P03L3 G Datasheet
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IPD042P03L3 G
Manufacturer Part Number
IPD042P03L3 G
Description
MOSFET P-CH 30V 70A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD042P03L3_G.pdf
(9 pages)
Specifications of IPD042P03L3 G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.2 mOhm @ 70A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
1V @ 270µA
Gate Charge (qg) @ Vgs
175nC @ 10V
Input Capacitance (ciss) @ Vds
12400pF @ 15V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0042 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
70 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Package
DPAK (TO-252)
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
4.2 mOhm
Rds (on) (max) (@4.5v)
6.8 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000473922