IPD70N10S3L-12 Infineon Technologies, IPD70N10S3L-12 Datasheet - Page 2

• Manufacturer Part Number: IPD70N10S3L-12
• Description: MOSFET N-CH 100V 70A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD70N10S3L-12

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11.5 mOhm @ 70A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 2.4V @ 83µA
• Gate Charge (qg) @ Vgs: 77nC @ 10V
• Input Capacitance (ciss) @ Vds: 5550pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0115 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 70 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD70N10S3L-12; IPD70N10S3L-12TR; SP000261250

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
1)
j
=25 °C, unless otherwise specified
Symbol
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
DS(on)
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
j
j
GS
DS
DS
DS
GS
GS
GS
=25°C
=125°C
page 2
=V
=80V, V
=80V, V
=0V, I
=16V, V
=4.5V, I
=10 V, I
2
Conditions
cooling area
GS
, I
1)
D
= 1mA
D
D
D
GS
GS
DS
=83µA
=70A
=70 A
=0V,
=0V,
=0V
2)
min.
100
1.2
-
-
-
-
-
-
-
-
Values
0.01
11.7
typ.
1.7
9.6
1
-
-
-
-
-
IPD70N10S3L-12
max.
15.2
11.5
100
1.2
2.4
0.1
62
40
10
-
2008-02-12
Unit
K/W
V
µA
nA
m