IPP80N04S3-H4 Infineon Technologies, IPP80N04S3-H4 Datasheet
IPP80N04S3-H4
Specifications of IPP80N04S3-H4
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IPP80N04S3-H4 Summary of contents
Page 1
... Rev. 1.0 Product Summary PG-TO263-3-2 Marking 3N04H4 3N04H4 3N04H4 Symbol Conditions I T =25° =100 ° = =25 °C D,pulse = =25 °C tot stg - - page 1 IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3-H4 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value =10V 80 80 320 370 80 ±20 115 -55 ... +175 55/175/ 4 Unit °C 2008-08-01 ...
Page 2
... (BR)DSS =65 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A DS( SMD version page 2 IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3-H4 Values min. typ. max 1 2.1 3.0 4 100 = 100 - 3.9 4.8 - 3.6 4.5 Unit K µA nA mΩ 2008-08-01 ...
Page 3
... D G d(off = = plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ 1.3K/W the chip is able to carry 119A at 25°C. thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3-H4 Values min. typ. max. - 3000 3900 = 850 1100 - 130 - = 5 0. Unit pF 200 - ...
Page 4
... V DS Rev. 1.0 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-08-01 ...
Page 5
... V GS Rev. 1.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 6 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 7 -55 °C 25 °C 6 175 ° -60 [V] page 5 IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3- °C; SMD 5 [ SMD - 100 T [° 6 100 120 140 180 2008-08-01 ...
Page 6
... V SD Rev. 1.0 10 Typ. capacitances 650µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 [V] page 6 IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3- MHz [ j(start) 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss °C 1000 2008-08-01 ...
Page 7
... A 200 80 A 100 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.0 14 Typ. drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3- -60 - 100 T [° 140 180 Q gate 2008-08-01 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPI80N04S3-H4, IPP80N04S3-H4 page 8 IPB80N04S3-H4 2008-08-01 ...
Page 9
... Revision History Version Rev. 1.0 IPI80N04S3-H4, IPP80N04S3-H4 Date page 9 IPB80N04S3-H4 Changes 2008-08-01 ...