IPD180N10N3 G Infineon Technologies, IPD180N10N3 G Datasheet - Page 5

• Manufacturer Part Number: IPD180N10N3 G
• Description: MOSFET N-CH 100V 43A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD180N10N3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 43A
• Vgs(th) (max) @ Id: 3.5V @ 33µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 71W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5 Typ. output characteristics
I
7 Typ. transfer characteristics
I
V
V
160
140
120
100
80
60
40
20
80
60
40
20
0
0
0
0
T
V
V
T
1
I R
2
2
V
V
DS
GS
4
[V]
[V]
3
6
4
5
8
6 Typ. drain-source on resistance
R
8 Typ. forward transconductance
g
I
35
30
25
20
15
10
60
40
20
5
0
0
0
0
I
T
V
T
20
20
I
I
D
D
40
[A]
[A]
IPD180N10N3 G
40
60
60
80