IPI80P03P4L-07 Infineon Technologies, IPI80P03P4L-07 Datasheet
IPI80P03P4L-07
Specifications of IPI80P03P4L-07
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IPI80P03P4L-07 Summary of contents
Page 1
... Parameter Continuous drain current 2) Pulsed drain current Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.0 IPI80P03P4L-07, IPP80P03P4L-07 Product Summary (SMD Version) DS(on PG-TO263-3-2 Marking ...
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... DSS T =25° =-24V =125° =-16V, V GSS =-4.5V, I =-40A DS(on =-4.5V, I =-40A SMD version V =-10V, I =-80A =-10V, I =-80A SMD version page 2 IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 Values min. typ. max 1 -30 - -1.0 -1.5 -2.0 =0V, - -0.03 -1 =0V, - -10 -100 = -100 - 8.3 12 5.9 7 ...
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... plateau =25° S,pulse V =0V, I =-80A =25° =-15V, I =-80A /dt =-100A/µ 1.7K/W the chip is able to carry 92A at 25°C. thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 Values min. typ. max. - 4400 5700 - 1220 1600 - -3 -80 - ...
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... DS Rev. 1.0 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L- ≤ -6V; SMD 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-07-29 ...
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... GS Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 4. 3. [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 9 -55 °C 25 °C 8 175 ° - [V] page 5 IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L- °C; SMD -4V -4. 160 240 - -10 V; SMD - 100 T [°C] j -5V -10V 320 140 180 2008-07-29 ...
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... SD Rev. 1.0 10 Typ. capacitances 1300µ 100 140 180 12 Avalanche characteristics I = f(t AS parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 [V] page 6 IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L- MHz [ j(start) 25°C 100°C 150° 100 t [µs] AV Ciss Coss Crss 25 30 1000 2008-07-29 ...
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... A 250 200 150 80 A 100 [° Typ. gate charge -80 A pulsed GS gate D parameter gate Rev. 1.0 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms -24V - [nC] page 7 IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L- -60 - 100 T [° 140 180 gate gate 2008-07-29 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPI80P03P4L-07, IPP80P03P4L-07 page 8 IPB80P03P4L-07 2008-07-29 ...
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... Revision History Version Rev. 1.0 IPI80P03P4L-07, IPP80P03P4L-07 Date page 9 IPB80P03P4L-07 Changes 2008-07-29 ...