NTTFS4800NTWG ON Semiconductor, NTTFS4800NTWG Datasheet - Page 6
![MOSFET N-CH 30V 5A 8WDFN](/photos/30/99/309910/wdfn-8_sml.jpg)
NTTFS4800NTWG
Manufacturer Part Number
NTTFS4800NTWG
Description
MOSFET N-CH 30V 5A 8WDFN
Manufacturer
ON Semiconductor
Datasheet
1.NTTFS4800NTWG.pdf
(7 pages)
Specifications of NTTFS4800NTWG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
16.6nC @ 10V
Input Capacitance (ciss) @ Vds
964pF @ 15V
Power - Max
860mW
Mounting Type
Surface Mount
Package / Case
8-WDFN
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11.1 Ohms
Forward Transconductance Gfs (max / Min)
28 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8.3 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Gate Charge Qg
8.4 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1000
0.01
100
0.1
10
1
0.000001
Duty Cycle = 50%
20%
10%
5%
2%
1%
Single Pulse
0.00001
0.0001
0.001
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
http://onsemi.com
PULSE TIME (sec)
0.01
6
0.1
1
10
100
1000