NTTFS4800NTWG ON Semiconductor, NTTFS4800NTWG Datasheet

NTTFS4800NTWG

Manufacturer Part Number

NTTFS4800NTWG

Description

MOSFET N-CH 30V 5A 8WDFN

Manufacturer

ON Semiconductor

Datasheet

1.NTTFS4800NTWG.pdf (7 pages)

Specifications of NTTFS4800NTWG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

20 mOhm @ 20A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

16.6nC @ 10V

Input Capacitance (ciss) @ Vds

964pF @ 15V

Power - Max

860mW

Mounting Type

Surface Mount

Package / Case

8-WDFN

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

11.1 Ohms

Forward Transconductance Gfs (max / Min)

28 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

8.3 A

Power Dissipation

2.2 W

Maximum Operating Temperature

+ 125 C

Mounting Style

SMD/SMT

Gate Charge Qg

8.4 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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NTTFS4800N

Power MOSFET

30 V, 32 A, Single N−Channel, m8FL

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

January, 2011 − Rev. 1

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

Power Dissipation R

(Note 1)

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

Power Dissipation

Continuous Drain

Current R

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Drain to Source DV/DT

Single Pulse Drain−to−Source Avalanche Energy

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Compliant

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

DC−DC Converters

Point of Load

Power Load Switch

Notebook Battery Management

Motor Control

qJA

qJC

= 27 A

= 25°C, V

≤ 10 s (Note 1)

(Note 2)

(Note 1)

DS(on)

qJA

qJC

, L = 0.1 mH, R

(Note 1)

≤ 10 s

(Note 2)

(Note 1)

to Minimize Conduction Losses

= 50 V, V

Parameter

qJA

Steady

State

= 25 W)

= 25°C unless otherwise stated)

= 10 V,

= 25°C, t

= 10 ms

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

dV/dt

DSS

stg

−55 to

Value

+150

11.8

0.86

33.8

36.6

±20

260

8.3

6.0

2.2

8.5

4.5

5.0

3.6

6.0

V/ns

Unit

°C

†For information on tape and reel specifications,

NTTFS4800NTAG

NTTFS4800NTWG

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

CASE 511AB

(BR)DSS

30 V

(Note: Microdot may be in either location)

Device

WDFN8

(m8FL)

ORDERING INFORMATION

4800

G (4)

http://onsemi.com

N−Channel MOSFET

27 mW @ 4.5 V

20 mW @ 10 V

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

D (5−8)

DS(on)

(Pb−Free)

Package

WDFN8

MARKING DIAGRAM

Publication Order Number:

MAX

S (1,2,3)

AYWWG

1500/Tape & Reel

5000/Tape & Reel

4800

NTTFS4800N/D

Shipping

32 A

MAX

†

Related parts for NTTFS4800NTWG

NTTFS4800NTWG Summary of contents

Page 1

... P 33 Device T , −55 to °C J NTTFS4800NTAG T +150 stg NTTFS4800NTWG dV/dt 6.0 V/ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification T 260 °C Brochure, BRD8011/ http://onsemi.com R MAX I MAX DS(on) ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 3) Junction−to−Ambient – Steady State (Note 4) Junction−to−Ambient – (t ≤ (Note 3) 3. Surface−mounted on FR4 board using 1 sq−in pad Cu. 4. ...

Page 3

ELECTRICAL CHARACTERISTICS (T Parameter SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain ...

Page 4

V 4 4 0 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.030 0.028 0.026 0.024 0.022 0.020 0.018 0.016 0.014 0.012 ...

Page 5

C iss 1000 800 600 400 C oss 200 C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 100 ...

Page 6

Duty Cycle = 50% 100 20 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 100 1000 ...

Page 7

... M 0.57 0.75 0.47 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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