SPD18P06P G Infineon Technologies, SPD18P06P G Datasheet - Page 8

• Manufacturer Part Number: SPD18P06P G
• Description: MOSFET P-CH 60V 18.6A TO252-3
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPD18P06P G

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 18.6A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18.6 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package: DPAK (TO-252)
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 130.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000443926

Avalanche energy
E
para.: I
Drain-source breakdown voltage
V
AS
(BR)DSS
mJ
Rev 3.1
160
120
100
V
-72
-68
-66
-64
-62
-60
-58
-56
-54
= f ( T
80
60
40
20
0
-60
25
D
SPD18P06P
= -18.6 A , V
= f ( T
j
45
)
-20
65
j
)
20
85
60
DD
105
= -25 V, R
100
125
145
140
°C
GS
°C
T
T
j
j
= 25
185
200
Page 8
Typ. gate charge
V
parameter: I
GS
V
-16
-12
-10
= f ( Q
-8
-6
-4
-2
0
0
SPD18P06P
4
Gate
D
0,2
= -18.6 A pulsed
8
)
V
DS max
12
16
SPD18P06P
20
SPU18P06P
24
0,8
2008-02-18
V
28
DS max
nC
Q
Gate
34