IPD30N08S2L-21 Infineon Technologies, IPD30N08S2L-21 Datasheet - Page 3

• Manufacturer Part Number: IPD30N08S2L-21
• Description: MOSFET N-CH 75V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD30N08S2L-21

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 80µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 1650pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 20.5 m Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 2.1 V
• Continuous Drain Current: 30 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000252170

Rev. 1.0
1)
information see app.-note ANPS071E available at www.infineon.com/optimos
2)
3)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Current limited by bondwire; with an RthJC = 1.1K/W the chip is able to carry ID= 54A at 25°C, for detailed
Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
2)
2)
2)
2)
2)
2)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
I
V
V
T
V
T
V
di
V
di
D
C
j
GS
DD
DD
GS
GS
R
R
=30 A, R
=25 °C
F
F
page 3
=25 °C
=40 V, I
=40 V, I
/dt =100 A/µs
/dt =100 A/µs
=0 V, V
=40 V, V
=60 V, I
=0 to 10 V
=0 V, I
Conditions
F
F
F
G
DS
=30 A,
=I
=I
D
=3.9
GS
=30 A,
=25 V,
S
S
=10 V,
,
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1650
typ.
400
190
120
3.5
0.9
30
44
11
22
56
50
9
6
-
-
IPD30N08S2L-21
max.
120
6.8
1.3
32
72
30
-
-
-
-
-
-
-
-
-
-
2006-07-18
Unit
pF
ns
nC
V
A
V
ns
nC