IPD50N06S2-14 Infineon Technologies, IPD50N06S2-14 Datasheet - Page 5

• Manufacturer Part Number: IPD50N06S2-14
• Description: MOSFET N-CH 55V 50A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD50N06S2-14

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14.4 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 80µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1485pF @ 25V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14.4 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 2.1 V
• Continuous Drain Current: 50 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000252171

Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
200
160
120
100
80
40
90
80
70
60
50
40
30
20
10
0
0
DS
GS
0
2
); T
); V
GS
j
j
DS
= 25 °C
1
= 6V
3
10 V
2
175 °C
4
3
V
V
25 °C
GS
DS
6.5 V
6 V
5.5 V
5 V
[V]
[V]
7 V
4
-55 °C
5
5
6
6
page 5
7
7
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. Forward transconductance
g
parameter: g
fs
DS(on)
= f(I
80
70
60
50
40
30
20
10
50
40
30
20
10
0
= (I
D
0
0
); T
D
); T
j
= 25°C
fs
GS
j
20
20
= 25 °C
5.5 V
40
40
I
I
D
D
[A]
[A]
60
60
IPD50N06S2-14
6 V
80
80
2008-10-21
10 V
6.5 V
7 V
100
100