BSP613P L6327 Infineon Technologies, BSP613P L6327 Datasheet - Page 6

• Manufacturer Part Number: BSP613P L6327
• Description: MOSFET P-CH 60V 2.9A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP613P L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 875pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.9 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSP613P L6327; BSP613PL6327INTR; BSP613PL6327XT; SP000089224

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f ( V
parameter: V
Rev.2.4
DS(on)
pF
W
0.34
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
10
10
10
10
-60
4
3
2
1
0
BSP613P
DS
= f ( T
)
-5
-20
D
GS
j
)
-10
= -2.9 A, V
=0V, f =1 MHz
20
-15
98%
-20
typ
60
GS
-25
100
= -10 V
-30
C
C
C
°C
iss
oss
rss
V
T
V
j
DS
180
-40
Page 6
12 Forward characteristics of reverse diode
I
parameter: T j , t
F
10 Gate threshold voltage
V
parameter: V
= f (V
-10
-10
-10
-10
GS(th)
-5.0
-5.0
-5.0
-5.0
V
V
V
V
-4.0
-4.0
-4.0
-4.0
-3.5
-3.5
-3.5
-3.5
-3.0
-3.0
-3.0
-3.0
-2.5
-2.5
-2.5
-2.5
-2.0
-2.0
-2.0
-2.0
-1.5
-1.5
-1.5
-1.5
-1.0
-1.0
-1.0
-1.0
-0.5
-0.5
-0.5
-0.5
A
0.0
0.0
0.0
0.0
-1
-60
-60
-60
-60
0.0
2
1
0
BSP613P
SD
= f ( T j )
-0.4
)
-20
-20
-20
-20
-0.8
GS
p
20
20
20
20
= 80 µs
= V
-1.2
T
T
T
T
j
j
j
j
DS
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
60
60
60
60
-1.6
98%
2%
, I
typ
D
= -1 mA
-2.0
100
100
100
100
2007-02-08
BSP613P
-2.4
°C
°C
°C
°C
V
V
T
T
T
T
SD
j
j
j
j
-3.0
180
180
180
180