BSC060P03NS3E G Infineon Technologies, BSC060P03NS3E G Datasheet

BSC060P03NS3E G

Manufacturer Part Number

BSC060P03NS3E G

Description

MOSFET P-CH 30V 17.7A TDSON-8

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Datasheet

1.BSC060P03NS3E_G.pdf (9 pages)

Specifications of BSC060P03NS3E G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

6 mOhm @ 50A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

17.7A

Vgs(th) (max) @ Id

1.9V @ 150µA

Gate Charge (qg) @ Vgs

81nC @ 10V

Input Capacitance (ciss) @ Vds

6020pF @ 15V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-TSDSON

Package

SuperSO8

Vds (max)

-30.0 V

Rds (on) (max) (@10v)

6.0 mOhm

Rds (on) (max) (@4.5v)

Rds (on) (max) (@2.5v)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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