NDF04N60ZG ON Semiconductor, NDF04N60ZG Datasheet - Page 4

• Manufacturer Part Number: NDF04N60ZG
• Description: MOSFET N-CH 600V 4A TO-220FP
• Manufacturer: ON Semiconductor

Specifications of NDF04N60ZG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 535pF @ 25V
• Power - Max: 28W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.8 Ohms
• Gate Charge Qg: 19 nC
• Forward Transconductance Gfs (max / Min): 3.3 S
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 28 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1200
1000
0.01
800
600
400
200
100
100
0.1
10
10
0
1
1
0
1
1
Figure 9. Resistive Switching Time Variation
V
I
V
Figure 11. Maximum Rated Forward Biased
D
C
DD
GS
C
oss
= 4 A
iss
Safe Operating Area for NDF04N60Z
= 300 V
= 10 V
V
V
C
DS
DS
Figure 7. Capacitance Variation
rss
R
Thermal Limit
Package Limit
V
Single Pulse
T
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
C
GS
DS(on)
50
R
= 25°C
G
≤ 30 V
vs. Gate Resistance
, GATE RESISTANCE (W)
dc
10
Limit
10 ms
100
10
1 ms
100
100 ms 10 ms
TYPICAL CHARACTERISTICS
150
V
T
f = 1.0 MHz
J
GS
= 25°C
= 0 V
http://onsemi.com
t
t
t
t
d(off)
d(on)
r
f
1000
200
100
4
20
15
10
5
0
0
0.01
100
0.1
10
1
Qgs
Drain−to−Source Voltage vs. Total Charge
4
3
2
1
0
0.4
1
R
Thermal Limit
Package Limit
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 12. Maximum Rated Forward Biased
DS(on)
GS
J
Figure 8. Gate−to−Source and
= 25°C
Qg, TOTAL GATE CHARGE (nC)
Safe Operating Area for NDD04N60Z
= 0 V
V
5
V
0.5
DS
Limit
SD
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
, SOURCE−TO−DRAIN VOLTAGE (V)
V
Single Pulse
T
C
GS
0.6
10
Qgd
= 25°C
10 ms
QT
≤ 30 V
10
dc
1 ms
0.7
100 ms
15
100
0.8
T
I
10 ms
D
J
= 4 A
= 25°C
V
0.9
GS
20
400
300
200
100
0
1000
1.0