NTD25P03LT4G ON Semiconductor, NTD25P03LT4G Datasheet - Page 2

• Manufacturer Part Number: NTD25P03LT4G
• Description: MOSFET P-CH 30V 25A DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD25P03LT4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 25A, 5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 1260pF @ 25V
• Power - Max: 75W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.051 Ohms
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: - 25 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD25P03LT4GOS; NTD25P03LT4GOS; NTD25P03LT4GOSTR

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 3 & 4)
BODY−DRAIN DIODE RATINGS (Note 3)
Drain−to−Source Breakdown Voltage (Note 3)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Diode Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
GS
DS
GS
GS
GS
DS
= −30 Vdc, V
= −30 Vdc, V
= V
= −8.0 Vdc, I
= 0 Vdc, I
= ±15 Vdc, V
= −5.0 Vdc, I
= −5.0 Vdc, I
= −4.0 Vdc, I
GS
, I
D
D
= −250 mAdc)
= −250 mA)
D
D
D
D
GS
GS
DS
= −12.5 Adc)
= −25 Adc)
= −10 Adc)
= −12.5 Adc)
= 0 Vdc, T
= 0 Vdc, T
= 0 Vdc)
Characteristic
J
J
= 25°C)
= 125°C)
(I
S
(T
= −25 Adc, V
(V
C
(V
= 25°C unless otherwise noted)
DS
(I
DD
S
(I
S
= −25 Vdc, V
= −25 Adc, V
dI
= −15 Vdc, I
V
= −25 A, V
(V
S
V
GS
f = 1.0 MHz)
R
DS
/dt = 100 A/ms)
I
GS
D
G
= −5.0 Vdc,
= −25 A)
= −24 Vdc,
GS
= 1.3 W)
= −5.0 V,
http://onsemi.com
= 0 V, T
GS
GS
GS
D
= −25 A,
= 0 V,
= 0 Vdc,
= 0 V)
J
2
= 125°C)
V
Symbol
R
V
(BR)DSS
t
t
I
C
I
DS(on)
Q
GS(th)
C
C
V
g
d(on)
d(off)
DSS
GSS
Q
Q
Q
Q
t
t
t
oss
t
FS
rss
t
SD
RR
iss
rr
a
b
r
f
T
1
2
3
−1.0
Min
−30
0.051
0.056
0.065
0.035
−1.6
−1.0
−0.9
Typ
−24
900
290
105
4.0
9.0
3.0
9.0
7.0
13
37
15
16
15
35
20
14
0.072
0.080
0.090
−100
−100
1260
Max
−1.0
−2.0
−1.5
410
210
20
75
30
55
20
mV/°C
mV/°C
Mhos
Unit
nA
nC
mC
mA
pF
ns
ns
W
V
V
V