BSZ086P03NS3 G Infineon Technologies, BSZ086P03NS3 G Datasheet

BSZ086P03NS3 G

Manufacturer Part Number

BSZ086P03NS3 G

Description

MOSFET P-CH 30V 40A TSDSON-8

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Datasheet

1.BSZ086P03NS3_G.pdf (9 pages)

Specifications of BSZ086P03NS3 G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

8.6 mOhm @ 20A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

40A

Vgs(th) (max) @ Id

1.9V @ 105µA

Gate Charge (qg) @ Vgs

57.5nC @ 10V

Input Capacitance (ciss) @ Vds

4785pF @ 15V

Power - Max

2.1W

Mounting Type

Surface Mount

Package / Case

8-TSDSON

Configuration

Single Quad Drain Triple Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0086 Ohms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 25 V

Continuous Drain Current

13.5 A

Power Dissipation

69 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Package

S3O8 (3x3mm style SuperSO8)

Vds (max)

-30.0 V

Rds (on) (max) (@10v)

8.6 mOhm

Rds (on) (max) (@4.5v)

Rds (on) (max) (@2.5v)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SP000473024

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