BSZ086P03NS3 G Infineon Technologies, BSZ086P03NS3 G Datasheet
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BSZ086P03NS3 G
Manufacturer Part Number
BSZ086P03NS3 G
Description
MOSFET P-CH 30V 40A TSDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSZ086P03NS3_G.pdf
(9 pages)
Specifications of BSZ086P03NS3 G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.6 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
1.9V @ 105µA
Gate Charge (qg) @ Vgs
57.5nC @ 10V
Input Capacitance (ciss) @ Vds
4785pF @ 15V
Power - Max
2.1W
Mounting Type
Surface Mount
Package / Case
8-TSDSON
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0086 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
13.5 A
Power Dissipation
69 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Package
S3O8 (3x3mm style SuperSO8)
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
8.6 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000473024